Degradation of GaN HEMTs under High-power and High-temperature Conditions
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چکیده
Due to the wide band gap energy and high breakdown electric field of GaN, heterostructure transistors made from it are promising candidates for high power and high frequency applications. However, one issue that prevents the wide deployment of GaN HEMTs is their reliability. Research has been actively trying to improve the reliability of these devices. In spite of this, detailed understanding of the physics of device degradation mechanisms is still lacking . Our research aims to fill this gap.
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Degradation of GaN HEMTs under High-power and High-temperature Conditions
Due to the wide band gap energy and high breakdown electric field of GaN, heterostructure transistors made from it are promising candidates for high power and high frequency applications. However, one issue that prevents the wide deployment of GaN HEMTs is their reliability. Research has been actively trying to improve the reliability of these devices. In spite of this, detailed understanding o...
متن کاملDegradation of GaN HEMTs under High-power and High-temperature Conditions
Due to the wide band gap energy and high breakdown electric field of GaN, heterostructure transistors made from it are promising candidates for high power and high frequency applications. However, one issue that prevents the wide deployment of GaN HEMTs is their reliability. Research has been actively trying to improve the reliability of these devices. In spite of this, detailed understanding o...
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